Semiconductor device and manufacturing method of the same

ABSTRACT

On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed in the bulk silicon region. By covering the end portions of the epitaxial layers with silicon nitride films, even when diffusion layers are formed by implanting ions from above the epitaxial layers, it is possible to prevent the impurity ions from being implanted down to a lower surface of a silicon layer.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority from Japanese Patent ApplicationNo. 2012-088545 filed on Apr. 9, 2012, the content of which is herebyincorporated by reference into this application.

TECHNICAL FIELD

The present invention relates to a semiconductor device and amanufacturing method of the same, and in particular to a techniqueeffectively applied to a semiconductor device using an SOI (Silicon OnInsulator) substrate and a manufacturing method of the same.

BACKGROUND

At present, as a semiconductor device capable of suppressing thegeneration of a parasitic capacitance, a semiconductor device with anSOI substrate has been used. The SOI substrate is a substrate in which aBOX (Buried Oxide) film is formed on a support substrate made of Si(silicon) having a high resistance or the like and a thin layer (siliconlayer) mainly made of Si (silicon) is formed on the BOX film. In thecase when a MOSFET (Metal Oxide Semiconductor Field Effect Transistor:MOS-type field effect transistor) is formed on the SOI substrate, it ispossible to reduce a parasitic capacitance generated in a diffusionregion formed in the silicon layer. For this reason, by producing asemiconductor device using the SOI substrate, for example, theintegration density and operation speed of the semiconductor device canbe improved, and the prevention of latch-up can be expected.

Japanese Patent Application Laid-Open Publication No. 2009-076549(Patent Document 1) describes a structure in which a transistor isformed on each of an SOI layer and a bulk layer on a singlesemiconductor layer.

International Patent Application Publication WO 2007/004535 Pamphlet(Patent Document 2) describes a structure in which an SOI-type MISFET(Metal Insulator Semiconductor FET) and a bulk-type MISFET are formed ona semiconductor substrate.

Japanese Patent Application Laid-Open Publication No. 2007-311607(Patent Document 3) describes a structure in which an SOI region and abulk silicon region are formed in the same substrate, and a MISFET isformed in each of the SOI region and the bulk silicon region.

Japanese Patent Application Laid-Open Publication No. 2006-135340(Patent Document 4) describes a method in which an n channel type MOSFETand a p channel type MOSFET are formed in a bulk silicon region, and asilicon layer is epitaxially grown in the source and drain regions ofone of the MOSFETs by using an insulating film.

SUMMARY

When an SOI region and a bulk silicon region are formed on the samesubstrate and a MOS-type field effect transistor (hereinafter, referredto simply as MOSFET) is formed on each of the regions, it is conceivablethat an epitaxial layer is formed in source and drain regions of theMOSFET in the SOI region and an epitaxial layer is formed also in sourceand drain regions of the MOSFET in the bulk silicon region. However,when the gate insulating film of the MOSFET in the bulk silicon regionis thicker than the gate insulating film of the MOSFET in the SOIregion, etching residues from the processing of the gate insulating filmsometimes remain in the bulk silicon region, and if an epitaxial layeris formed in the region having the etching residues, the epitaxial layeris not formed desirably.

The above and other objects and novel characteristics of the presentinvention will be apparent from the description of the presentspecification and the accompanying drawings.

The following is a brief description of an outline of the typicalembodiment disclosed in the present application.

In a semiconductor device according to one embodiment, epitaxial layersare formed in source and drain regions of a MOSFET in an SOI region, andno epitaxial layer is formed on source and drain regions of a MOSFET ina bulk silicon region.

Moreover, in a semiconductor device according to another embodiment, aMOSFET using a thicker gate oxide film and a MOSFET using a thinner gateoxide film are formed in the bulk silicon region, and no epitaxial layeris formed in the source and drain regions of the MOSFET using thethicker gate oxide film.

According to one embodiment disclosed in the present application, it ispossible to improve the performances of the semiconductor device.Moreover, it is possible to improve the reliability of the semiconductordevice.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing a semiconductor deviceaccording to the first embodiment of the present invention;

FIG. 2 is a cross-sectional view showing a manufacturing method of thesemiconductor device according to the first embodiment of the presentinvention;

FIG. 3 is a cross-sectional view showing the manufacturing method of thesemiconductor device continued from FIG. 2;

FIG. 4 is a cross-sectional view showing the manufacturing method of thesemiconductor device continued from FIG. 3;

FIG. 5 is a cross-sectional view showing the manufacturing method of thesemiconductor device continued from FIG. 4;

FIG. 6 is a cross-sectional view showing the manufacturing method of thesemiconductor device continued from FIG. 5;

FIG. 7 is a cross-sectional view showing the manufacturing method of thesemiconductor device continued from FIG. 6;

FIG. 8 is a cross-sectional view showing the manufacturing method of thesemiconductor device continued from FIG. 7;

FIG. 9 is a cross-sectional view showing the manufacturing method of thesemiconductor device continued from FIG. 8;

FIG. 10 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 9;

FIG. 11 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 10;

FIG. 12 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 11;

FIG. 13 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 12;

FIG. 14 is a cross-sectional view showing a manufacturing method of asemiconductor device according to the second embodiment of the presentinvention;

FIG. 15 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 14;

FIG. 16 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 15;

FIG. 17 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 16;

FIG. 18 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 17;

FIG. 19 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 18;

FIG. 20 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 19;

FIG. 21 is a cross-sectional view showing the manufacturing method ofthe semiconductor device continued from FIG. 20; and

FIG. 22 is a cross-sectional view showing a semiconductor deviceaccording to the third embodiment of the present invention.

DETAILED DESCRIPTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that componentshaving the same function are denoted by the same reference symbolsthroughout the drawings for describing the embodiments, and therepetitive description thereof will be omitted.

First Embodiment

A MOSFET according to the present embodiment will be described withreference to drawings. FIG. 1 is a cross-sectional view of asemiconductor device according to the present embodiment, that is, asemiconductor device having an n channel type MOSFET formed on an SOTsubstrate. The left side of the cross-sectional view of FIG. 1represents an SOI region 1A, and the right side of the cross-sectionalview of FIG. 1 represents a bulk silicon region 1B. In the SOT region1A, a silicon layer (SOI layer, semiconductor layer) 3 is formed on asemiconductor substrate 1 via a BOX film 2 and a MOSFET Qa is formed onthe silicon layer 3, and in the bulk silicon region 1B, none of the BOXfilm (insulating film) 2 and the silicon layer 3 are formed on thesemiconductor substrate 1 and a MOSFET Qb is formed on the main surfaceof the semiconductor substrate 1.

In this case, the MOSFET formed in the SOI region 1A is mainly used fora logic circuit, an SRAM or the like, and corresponds to a MOSFET with acomparatively low withstand voltage. Moreover, the MOSFET formed in thebulk silicon region 1B is mainly used for an I/O circuit or the like,and corresponds to a MOSFET with a comparatively high withstand voltage.

As shown in FIG. 1, the semiconductor device of the present embodimentis provided with the semiconductor substrate 1, and the SOI region 1Aand the bulk silicon region 1B separated from each other by an elementseparation region 4 are provided on the main surface of thesemiconductor substrate 1. The semiconductor substrate 1 is a supportsubstrate made of, for example, Si (silicon), and the element separationregion 4 is an insulating film made of a silicon oxide film or the like.On the main surface of the semiconductor substrate 1 in the SOI region1A, the silicon layer 3, which is a semiconductor layer made of singlecrystal silicon having a resistance of about 1 to 10 Ωcm, is formed viathe BOX film 2 made of a silicon oxide film, and one portion of thesilicon layer 3 forms a channel region through which an electric currentflows at the time of the operation of the MOSFET Qa. The upper surfaceof the element separation region 4 is positioned at a region higher thanthe upper surface of the silicon layer 3. Also, the bottom surface ofthe element separation region 4 reaches a region deeper than the bottomsurface of the BOX film 2 corresponding to an intermediate depth of thesemiconductor substrate 1.

The MOSFET Qa is formed on the silicon layer 3 in the SOI region 1A. Onthe silicon layer 3 in the SOI region 1A, a gate electrode (conductorlayer) 7 a is formed via a gate insulating film (insulating film) 6 a,and a sidewall made up of a silicon oxide film 5 and a silicon nitridefilm 13 is formed in a self-aligned manner on the side wall of the gateelectrode 7 a. In the silicon layer 3, extension regions 8 which aresemiconductor regions to which an n-type impurity (for example, As(arsenic)) is introduced at a comparatively low concentration are formedso as to sandwich the gate electrode 7 a when seen in a plan view. Morespecifically, in the silicon layer 3 on the both sides of the gateelectrode 7 a, a pair of extension regions 8 is formed. In the siliconlayer 3 right below the gate electrode 7 a, a region in which noextension region 8 is formed is provided, and this region forms achannel region of the MOSFET Qa.

In the SOI region 1A, on the part of the silicon layer 3 that is notcovered with the gate electrode 7 a, the gate insulating film 6 a, andthe silicon oxide film 5, epitaxial layers 14 are formed so as tosandwich the gate electrode 7 a. An n-type impurity (for example, As(arsenic)) is introduced into the pair of epitaxial layers 14 formed onthe both sides of the gate electrode 7 a, thereby forming n-typesemiconductor layers constituting diffusion layers 10. Into thediffusion layers 10, the n-type impurity (for example, As (arsenic)) isintroduced at a concentration higher than that of the extension regions8. Of the semiconductor layers on the both sides of the gate electrode 7a, one of the diffusion layers 10 and one of the extension regions 8constitute a source region of the MOSFET Qa, and the other diffusionlayer 10 and the other extension region 8 constitute a drain region ofthe MOSFET Qa. A case in which the n-type impurity (for example, As(arsenic)) is introduced into the entire regions of the epitaxial layers14 and the diffusion layers 10 are formed in the corresponding regionsis described here, but the impurity may be introduced into a part of thesilicon layer 3 below each of the epitaxial layers 14.

The silicon oxide films 5 forming the respective sidewalls that are incontact with side walls on the both sides of the gate electrode 7 ainclude a silicon oxide film that is formed along the side wall of astacked film made up of the gate electrode 7 a and the gate insulatingfilm 6 a and a silicon oxide film that is formed along the upper surfaceof the silicon layer 3, and they have an L-shape cross section along thegate length direction of the gate electrode 7 a. Each silicon oxide film5 is covered with the silicon nitride film 13, and the uppermost surfaceof the silicon oxide film 5 is positioned at a region lower than theuppermost surface of the silicon nitride film 13.

The epitaxial layer 14 has a film thickness larger than that of the gateinsulating film 6 a, and the film thickness of the epitaxial layer 14becomes thinner as being close to the end portion thereof. For example,the epitaxial layer 14 has a smaller thickness in the vicinity of thesilicon oxide film 5 adjacent thereto, and at a part of the region apartfrom the silicon oxide film 5, it has a larger thickness than that ofthe region in the vicinity of the silicon oxide film 5. Morespecifically, the epitaxial layer 14 has a dome-like shape whose filmthickness is larger in the center portion than in the end portion.Moreover, the epitaxial layer 14 has a film thickness larger than thatof the gate insulating film 6 a, and since both of the epitaxial layer14 and the gate insulating film 6 a are formed so as to be in contactwith the upper surface of the silicon layer 3, the upper surface of theepitaxial layer 14 is higher than the upper surface of the gateinsulating film 6 a.

Therefore, since the upper surface of the gate insulating film 6 a ispositioned at a region lower than the upper surface of the diffusionlayer 10, the upper surface of the gate insulating film 6 a is lowerthan the upper surface of the source and drain regions of the MOSFET Qa.In other words, in the MOSFET Qa in the SOI region 1A, the upper surfaceof the source and drain regions is positioned at a region higher thanthe interface between the gate insulating film 6 a and the silicon layer3. In this case, the upper surface of the source and drain regionsmentioned here refers to a position having the largest upper surfaceheight in the source and drain regions made up of the extension regions8 and the diffusion layers 10 in the SOI region 1A.

In contrast, in the MOSFET Qb in the bulk silicon region 1B, the uppersurface of the source and drain regions is as high as or lower than theinterface between the gate insulating film 6 b and the semiconductorsubstrate 1. The reason why the upper surface of the source and drainregions of the MOSFET Qb, that is, the uppermost surface of the n-typesemiconductor layer including the diffusion layer 11 is as high as orlower than the interface between the gate insulating film 6 b and thesemiconductor substrate 1 is that the above-mentioned source and drainregions are formed by implanting impurity ions into the semiconductorsubstrate 1. Additionally, the reason why the upper surface of thesource and drain regions of the MOSFET Qb is lower than the interfacebetween the gate insulating film 6 b and the semiconductor substrate 1is that the exposed upper surface of the semiconductor substrate 1 isrecessed in some cases due to an etching process at the time ofpatterning the gate insulating film 6 b or the like, an ion implantingprocess at the time of forming the diffusion layer 11, a cleaningprocess of the surface of the semiconductor substrate 1, and the like.

Herein, the upper surface of one portion of the end portion of theepitaxial layer 14 in a region adjacent to the silicon oxide film 5 iscovered with the silicon nitride film 13 constituting the sidewalls. Inother words, the upper surface of the end portion of the epitaxial layer14 on the gate electrode 7 a side is covered with the insulating film.

The above-mentioned MOSFET Qa is a field effect transistor having achannel region made up of the silicon layer 3, the gate electrode 7 a,and source and drain regions including the extension regions 8 and thediffusion layers 10.

Moreover, in the bulk silicon region 1B, the MOSFET Qb including noepitaxial layer is formed on the semiconductor substrate 1 having no SOIstructure formed thereon. More specifically, the MOSFET Qb in the bulksilicon region 1B has a channel region made up of one portion of theupper surface of the semiconductor substrate 1 and source and drainregions formed by implanting an impurity into the upper surface of thesemiconductor substrate 1. On the upper surface of the semiconductorsubstrate 1, the gate insulating film (insulating film) 6 b is formed soas to be in contact therewith, and on the semiconductor substrate 1, thegate electrode (conductor layer) 7 b is formed via the gate insulatingfilm 6 b. Moreover, on side walls of the gate electrode 7 b, sidewallseach made up of the silicon oxide film 5 and the silicon nitride film 13are formed in a self-aligned manner.

On the upper surface of the semiconductor substrate 1, extension regions9 which are semiconductor regions to which an n-type impurity (forexample, As (arsenic)) is introduced at a comparatively lowconcentration are formed so as to sandwich the gate electrode 7 b whenseen in a plan view. More specifically, on the upper surface of thesemiconductor substrate 1, on the both sides of the gate electrode 7 bin the gate length direction, a pair of extension regions 9 is formed.On the upper surface of the semiconductor substrate 1 right below thegate electrode 7 b, a region in which no extension region 9 is formed,and this region serves as a channel region of the MOSFET Qb.

On the part of the upper surface of the semiconductor substrate 1 thatis not covered with the gate electrode 7 b, the gate insulating film 6b, the silicon oxide film 5, and the silicon nitride film 13 in the bulksilicon region 1B, diffusion layers 11 which are semiconductor layers towhich an n-type impurity (for example, As (arsenic)) is introduced at acomparatively high concentration are formed. Into the diffusion layers11, the n-type impurity (for example, As (arsenic)) is introduced at aconcentration higher than that of the extension regions 9, and thediffusion layers 11 have a junction depth deeper than that of theextension regions 9. Of the semiconductor layers on the both sides ofthe gate electrode 7 b, one of the diffusion layers 11 and one of theextension regions 9 constitute a source region of the MOSFET Qb, and theother diffusion layer 11 and the other extension region 9 constitute adrain region of the MOSFET Qb.

The silicon oxide films 5 constituting the respective sidewalls that arein contact with side walls on the both sides of the gate electrode 7 binclude a silicon oxide film that is formed along the side wall of astacked film made up of the gate electrode 7 b and the gate insulatingfilm 6 b and a silicon oxide film that is formed along the upper surfaceof the silicon layer 3, and they have an L-shape cross section along thegate length direction of the gate electrode 7 b. Each silicon oxide film5 is covered with the silicon nitride film 13, and the uppermost surfaceof the silicon oxide film 5 is positioned at a region lower than theuppermost surface of the silicon nitride film 13. Both of the gateelectrodes 7 a and 7 b are made of, for example, a polysilicon film.

The MOSFET Qb is a field effect transistor having a channel region madeup of one portion of the upper surface of the semiconductor substrate 1,the gate electrode 7 b, and source and drain regions including theextension regions 9 and the diffusion layers 11. Additionally, the gateinsulating film 6 b has a film thickness larger than that of the gateinsulating film 6 a, and the gate electrode 7 b is formed to have a gatelength larger than that of the gate electrode 7 a. Here, since thesource and drain regions of the MOSFET Qb in the bulk silicon region 1Bdo not have any epitaxial layer and are formed in the semiconductorsubstrate 1, the upper surface of the source and drain regions is lowerthan the upper surface of the gate insulating film 6 b.

Examples of the film thicknesses of the respective layers in thesemiconductor device formed in the present embodiment are shown below.For example, the film thickness of the BOX film 2 is 10 to 20 nm, thefilm thickness of the silicon layer 3 is 10 to 20 nm, the film thicknessof the gate insulating film 6 a is 2 to 3 nm, the film thickness of thesilicon oxide film 5 is 10 to 20 nm, the film thickness of each of thegate electrodes 7 a and 7 b is 100 to 140 nm, and the film thickness ofthe gate insulating film 6 b is 3 to 8 nm. Moreover, the film thicknessof the diffusion layer 10 shown in FIG. 1, that is, the film thicknessof the epitaxial layer 14 is, for example, 20 to 60 nm. As describedabove, the film thickness of the epitaxial layer 14 is larger than thefilm thickness of the gate insulating film 6 a. Additionally, althoughit is conceivable that there is a case where the film thicknesses of thegate insulating film 6 a and the gate insulating film 6 b are almostequal to each other, the case where the film thickness of the gateinsulating film 6 b is larger than that of the gate insulating film 6 ais described here.

The above-mentioned film thicknesses indicate values of the filmthicknesses in a direction perpendicular to the main surface of thesemiconductor substrate 1 in the regions in which the respective layersextend along the main surface of the semiconductor substrate 1. Withrespect to the layers that extend along the side walls of the gateelectrode 7 a or 7 b, the film thicknesses in a direction along the mainsurface of the semiconductor substrate 1 are described as follows. Thatis, the film thickness of the silicon oxide film 5 is 10 to 20 nm, andthe film thickness of the silicon nitride film 13 is 40 to 60 nm.

Moreover, on the respective upper surfaces of the diffusion layers 10,the diffusion layers 11, and the gate electrodes 7 a and 7 b that arenot covered with the silicon nitride film 13, silicide layers 15 areformed. Each of the silicide layers 15 is mainly made of, for example,CoSi₂ (cobalt silicide). Also, in addition to the cobalt silicide,titanium silicide, nickel silicide, or platinum silicide may be used.The silicide layer 15 reduces the contact resistance of the gateelectrodes 7 a and 7 b and the diffusion layers 10 and 11 relative tocontact plugs 18 formed thereon.

An insulating film (etching stopper film) 16 is formed on the silicidelayer 15, the silicon nitride film 13, and the element separation region4 so as to cover the respective surfaces thereof, and an interlayerinsulating film 17 having a film thickness larger than that of theinsulating film 16 is formed on the insulating film 16. In a stackedfilm made up of the insulating film 16 and the interlayer insulatingfilm 17, a plurality of contact holes (connection holes) through whichthe upper surface of the silicide layer 15 is exposed are formed so asto penetrate the stacked film from the upper surface to the lowersurface. A contact plug 18 mainly made of, for example, W (tungsten) isformed in each of the plurality of contact holes. The contact plug 18 isa connection member having a pillar shape.

On the interlayer insulating film 17 and the contact plugs 18, wirings21 prepared as a pattern of a metal film electrically connected to thecontact plugs 18 are formed. The wirings 21 are metal wirings for use insupplying a predetermined electric potential to the respective sourceregions, drain regions, and gate electrodes 7 a and 7 b of the MOSFETsQa and Qb, and mainly contain, for example, Cu (copper). Additionally,FIG. 1 does not illustrate the contact plugs 18 and wirings 21 connectedto the gate electrodes 7 a and 7 b. The wirings 21 are damascene wiringsformed in wiring trenches that penetrate the stacked film made up of aninsulating film (etching stopper film) 19 and an interlayer insulatingfilm 20 that are sequentially stacked on the interlayer insulating film17. For example, the insulating films 16 and 19 are made of siliconnitride films, the interlayer insulating film 17 is made of a siliconoxide film, and the interlayer insulating film 20 is made of SiOC.

As described above, the SOI region 1A and the bulk silicon region 1B areprovided on the semiconductor substrate 1 constituting the semiconductordevice of the present embodiment, and MOSFETs suitable for therespective regions are formed on the SOI region 1A and the bulk siliconregion 1B. More specifically, in the SOI region 1A, by forming a lowwithstand voltage MOSFET Qa for which a high-speed signal processingfunction is required, effects such as the improvement of the elementintegration density in the SOI region 1A, the reduction of the powerconsumption, and the improvement of the operation speed can be obtained.These advantages can be obtained because of a small value of an electriccurrent flowing through the MOSFET Qa.

However, the MOSFET Qa constituting the circuits formed in the SOIregion 1A has a problem in that the withstand voltage between the sourceand drain is low due to a parasitic bipolar effect. Therefore, it isnecessary for the high withstand voltage MOSFET Qb that handles a highvoltage to be formed on a thick bulk silicon film (semiconductorsubstrate 1) that does not have the SOI structure. For theabove-mentioned reasons, the MOSFET Qb for which a withstand voltagehigher than that of the MOSFET Qa is required is formed in the bulksilicon region 1B because the MOSFET Qb is difficult to operate normallyif it is formed in the SOI region 1A.

In this case, the source and drain regions constituting the MOSFET Qa ofthe SOI region 1A include the epitaxial layers 14 formed on the siliconlayer 3 so as to be raised therefrom. The reason why these epitaxiallayers 14 are formed in the SOI region 1A will be described below.

In the case when the ion implantation is carried out to the surface ofthe semiconductor layer at a high concentration for the purpose offorming the diffusion layers constituting the source and drain regionsof the MOSFET, the semiconductor layer in a region where the impurityions are implanted is damaged and amorphized (non-crystallized). In thecase when the amorphized semiconductor layer is directly used for thesource and drain regions of the MOSFET, problems such as an increase inthe resistance value of the source and drain regions occur, andtherefore, it is necessary to crystallize the amorphized semiconductorlayer. As the method for crystallizing the semiconductor layeramorphized due to the ion implantation, for example, the method ofrecovering the crystallinity of the amorphous semiconductor layer by,for example, applying heat thereto can be adopted.

At this time, when the region amorphized due to the damage from the ionimplantation is only the upper surface of the silicon layer, by carryingout a heating (annealing) process, the amorphous silicon layer recoversits crystallinity and is crystallized with using a silicon singlecrystal, which is located in a lower portion and has not been damaged,as a core. For example, even when impurity ions are implanted into theupper surface of a semiconductor layer having a large film thicknesslike the semiconductor substrate 1, the portion of the semiconductorlayer that is amorphized due to the damage from the ion implantation islimited only to the upper surface of the semiconductor substrate 1.Therefore, since a single crystal silicon layer remains inside thesemiconductor substrate 1 in the lower portion of the damaged region,the crystallinity of the damaged region can be recovered by carrying outthe annealing process with using the single crystal silicon layer as agrowing core.

However, since the silicon layer 3 in the SOI region 1A as shown in FIG.1 is a very thin layer of, for example, about 1 to 20 nm, in the casewhen an ion implantation at a high concentration is directly carried outto the exposed upper surface of the silicon layer 3 to form thediffusion layer, the silicon layer 3 is amorphized from the uppersurface down to the lower surface. In this case, since no semiconductorlayer in a crystalline state is in contact with the lower portion of theamorphized region, no core for use in recovering its crystallinityexists, and it is not possible to sufficiently crystallize the amorphouslayer so as to recover from the damage even if the heating process iscarried out.

For this reason, it is conceivable that the epitaxial layers 14 areformed in the SOI region 1A so as to increase the film thickness of thesemiconductor layers used to form the diffusion layers of the source anddrain regions. By this means, the film thickness of the semiconductorlayer to which ions are implanted so as to form the diffusion layer 10is increased, thereby limiting the amorphized region only to the uppersurface of the semiconductor layer. Thus, the amorphous layer iscrystallized by applying heat with using a silicon single crystallocated in its lower portion as a core, so that it is possible torecover from the damage.

In other words, the purpose for forming the epitaxial layers 14 in theMOSFET Qa of the SOL region 1A is to prevent damages caused by the ionimplantation process from remaining in the diffusion layers 10 even whenan ion implantation method or the like is carried out so as to form thediffusion layers 10 constituting the source and drain regions.

In contrast, in the case when the epitaxial layer is formed in theMOSFET in the bulk silicon region 1B, electrical characteristicsfluctuate in comparison with the MOSFET having no epitaxial layer formedtherein, and variations occur among the plurality of MOSFETs. The MOSFETQb to be formed in the bulk silicon region 1B is a MOSFET having ahigher withstand voltage in comparison with the MOSFET Qa formed in theSOI region 1A, and the film thickness of the gate insulating film 6 b ofthe MOSFET Qb is sometimes larger than the film thickness of the gateinsulating film 6 a of the MOSFET Qa. In this case, when patterning thegate insulating film 6 b by an etching method or the like, sinceresidues from the gate insulating film 6 b tend to remain on the surfaceof the semiconductor substrate 1, if the epitaxial layer is formed onthe upper surface of the semiconductor substrate 1 with the residuesremaining thereon, the epitaxial layer fails to uniformly grow due tothe presence of the residues. In this manner, in the case of the MOSFETsincluding epitaxial layers which are not uniform in height or filmquality in the source and drain regions, variations in characteristicstend to occur among the plurality of MOSFETs.

In the present embodiment, the epitaxial layer is not formed in the bulksilicon region 1B in which the gate insulating film 6 b that is thickerthan the gate insulating film 6 a of the SOI region 1A is formed, sothat it becomes possible to prevent the occurrence of the variations incharacteristics of the MOSFET Qb. Consequently, it is possible toimprove performances of the semiconductor device. Moreover, thereliability of the semiconductor device can be improved. In this manner,in the present embodiment, it is possible to form MOSFETs respectivelysuitable for the SOI region 1A and the bulk silicon region 1B on thesame substrate. Moreover, the epitaxial layers 14 are formed in theMOSFET Qa in the SOI region 1A and no epitaxial layer is formed in theMOSFET Qb in the bulk silicon region 1B, so that it is possible toimprove performances of the respective MOSFETs.

In this case, in the SOI region 1A, the epitaxial layer 14 including thediffusion layer 10 has a dome-like shape whose film thickness is smallerin the end portion than in the center portion. As described earlier, theepitaxial layers 14 are formed so as to enable the recovery from damagesdue to the impurity implantation by increasing the film thickness of thesource and drain regions of the MOSFET Qa. However, when the filmthickness of the end portion of the epitaxial layer 14 is small,impurity ions implanted by the implanting process to form the diffusionlayer 10 sometimes reach the bottom surface of the silicon layer 3 rightbelow the end portion of the epitaxial layer 14. In this case, oneportion of the silicon layer 3 is amorphized from the upper surface downto the bottom surface, with the result that the recovery ofcrystallinity may be difficult.

In particular, in the case when sidewalls on the side walls of the gateelectrode 7 a are formed only in a region closer to the gate electrode 7a relative to the epitaxial layers 14 and the sidewalls are notoverlapped with the epitaxial layers 14 when seen in a plan view, sincethe epitaxial layers 14 are not covered with the side walls, the siliconlayer 3 located right below the end portion of the epitaxial layer 14 onthe gate electrode 7 a side is amorphized by the ion implantation. Inthis case, even in an attempt to recover crystallinity of the amorphizedsilicon layer by carrying out an annealing process, since no siliconsingle crystal to be a growing core of crystal remains in the vicinityof the silicon layer 3 right below the end portion of the epitaxiallayer 14, it might be difficult to sufficiently recover thecrystallinity of the silicon layer 3. The MOSFET including the silicidelayer 3 like this tends to cause the problems of the increase in aresistance value between the source and drain regions and the occurrenceof variations in electrical characteristics such as the on-currentvalue.

In contrast, in the semiconductor device of the present embodiment, asshown in FIG. 1, the silicon nitride films 13 constituting the sidewallsof the gate electrode 7 a overlap the portions right above the endportions of the epitaxial layers 14 with a small film thickness. Morespecifically, the upper surface of the region of the end portion of theepitaxial layer 14 with a small film thickness is covered with thesilicon nitride film 13, and the silicon nitride film 13 overlaps theepitaxial layer 14 when seen in a plan view. For this reason, during theion implantation process for forming the diffusion layer 10, the siliconnitride film 13 serves as a mask, so that it is possible to prevent thedirect implantation of impurity ions into the upper surface of the endportion of the epitaxial layer 14 corresponding to a region with a smallfilm thickness.

Therefore, impurity ions are not excessively implanted to the siliconlayer 3 right below the end portion of the epitaxial layer 14 closer tothe gate electrode 7 a, and it is possible to prevent the amorphizationranging from the upper surface down to the lower surface of the siliconlayer 3. Thus, since the crystallinity of the silicon layer 3 and theepitaxial layer 14 can be easily recovered and the degradation in theelectrical characteristics and the variations in electricalcharacteristics of the MOSFETs can be prevented, it becomes possible toimprove performances of the semiconductor device.

As described above, the semiconductor device according to the presentembodiment is characterized by including, on one semiconductor substrate1, the MOSFET Qb which includes no epitaxial layer and is formed in thebulk silicon region 1B and the MOSFET Qa which is provided with sourceand drain regions having the epitaxial layers 14 and is formed in theSOI region 1A. Moreover, the semiconductor device according to thepresent embodiment is characterized in that the upper surface of the endportion of the epitaxial layer 14 on the gate electrode 7 a side of theMOSFET Qa is covered with the sidewall of the gate electrode 7 a.

Next, the manufacturing processes of a MOSFET according to the presentembodiment will be described with reference to drawings. FIGS. 2 to 13are cross-sectional views showing manufacturing processes of asemiconductor device according to the present embodiment, that is, thesemiconductor device provided with an n channel type MOSFET in each ofthe SOI region and the bulk silicon region.

First, as shown in FIG. 2, a semiconductor substrate 1 on which a BOXfilm 2 and a silicon layer (SOI layer) 3 have been stacked is prepared.The semiconductor substrate 1 is a support substrate made of Si(silicon), and the BOX film 2 on the semiconductor substrate 1 is asilicon oxide film having a film thickness of, for example, 10 to 20 nm.The silicon layer 3 on the BOX film 2 has a resistance in a range from 1to 10 Ωcm and is made of single crystal silicon with a film thicknessof, for example, 10 to 20 nm.

An SOI substrate made up of the semiconductor substrate 1, the BOX film2, and the silicon layer 3 can be formed by a SIMOX (Silicon ImplantedOxide) method in which O₂ (oxygen) ions are implanted into the mainsurface of the semiconductor substrate 1 made of Si (silicon) with ahigh energy and Si (silicon) and oxygen are then bonded to each other bythe thermal treatment, thereby forming a buried oxide film (BOX film) ata position slightly deeper than the surface of the semiconductorsubstrate. Moreover, the SOI substrate can be formed also by theprocesses in which a semiconductor substrate 1 on the surface of whichan oxide film is formed and another sheet of a semiconductor substratemade of Si (silicon) are bonded and adhered to each other by applyinghigh temperature and pressure, and then the silicon layer on one side isreduced in thickness.

Next, as shown in FIG. 3, an element separation region 4 which is madeof an insulating film and penetrates the silicon layer 3 and the BOXfilm 2 to reach the intermediate depth of the semiconductor substrate 1is formed by using a conventionally known STI (Shallow Trench Isolation)method.

More specifically, after dry etching processes are sequentially carriedout to the silicon layer 3, the BOX film 2, and the semiconductorsubstrate 1 with using a photoresist film (not shown) as an etchingmask, thereby forming trenches (trenches for element separation) in thesemiconductor substrate 1 in a region where the element separationregion is to be formed, an ashing process is carried out to remove thephotoresist film R1. Subsequently, on the main surface of thesemiconductor substrate 1 including the inside (side wall and bottomportion) of the trench, for example, two layers of insulating films arestacked, thereby burying the inside of the trench. The materials ofthese stacked insulating films are, for example, silicon oxide films,and these are formed (deposited) by using a CVD (Chemical VaporDeposition) method or the like. Thereafter, the stacked insulating filmsare polished by a CMP (Chemical Mechanical Polishing) method to exposethe upper surface of the silicon layer 3, thereby forming the elementseparation region (element separation) 4 made up of the stackedinsulating films.

Note that, as shown in FIG. 3, the element separation region 4 made upof the stacked insulating films is indicated as one layer of a film.Moreover, although the element separation region 4 is formed by the STImethod in the description of the present embodiment, this may be formedby an LOCOS (Local Oxidization of Silicon) method.

Although not shown in the drawings, after the element separation region4 has been formed, a p-type impurity (for example, B (boron)) isimplanted into the semiconductor substrate 1 by an ion implantationmethod at a comparatively low concentration, thereby forming p-typewells in the semiconductor substrate 1. The p-type well is formed forthe purpose of, for example, adjusting threshold values of a MOSFET Qato be formed on the silicon layer 3 and a MOSFET Qb to be formed on thesemiconductor substrate 1 in the subsequent processes.

Next, as shown in FIG. 4, a photoresist film (not shown) which coversthe upper surface of one portion of the silicon layer 3 specified by theelement separation region 4 is formed. Next, the silicon layer 3 and theBOX film 2 not covered with the photoresist film are removed by, forexample, a wet-etching method using the photoresist film as a mask,thereby exposing the upper surface of the semiconductor substrate 1.Thereafter, the photoresist film is removed.

In this manner, on the semiconductor substrate 1 in the region coveredwith the photoresist film, a stacked film made up of the BOX film 2 andthe silicon layer 3 is left. In the present embodiment, the regionhaving the SOI structure in which the BOX film 2 and the silicon layer 3are formed is referred to as an SOI region 1A. In FIG. 4, the SOI region1A is shown on the left side of the drawing.

Moreover, in the above-mentioned etching process, on the semiconductorsubstrate 1 in the region not covered with the photoresist film, none ofthe BOX film 2 and the silicon layer 3 are formed, so that the uppersurface of the semiconductor substrate 1 is exposed. In the presentembodiment, the region in which none of the BOX film 2 and the siliconlayer 3 are formed and the bulk silicon forming the upper surface of thesemiconductor substrate 1 is exposed is referred to as a bulk siliconregion 1B. In FIG. 4, the bulk silicon region 1B is shown on the rightside of the drawing.

Next, as shown in FIG. 5, a gate electrode 7 a and a silicon nitridefilm 7 e are sequentially formed on the silicon layer 3 of the SOIregion 1A via a gate insulating film 6 a, and a gate electrode 7 b and asilicon nitride film 7 e are sequentially formed on the semiconductorsubstrate 1 of the bulk silicon region 1B via a gate insulating film 6b. For example, the film thickness of the gate insulating film 6 a isabout 2 to 3 nm, and the film thickness of the gate insulating film 6 bis about 3 to 8 nm. The film thickness of each of the gate electrodes 7a and 7 b is, for example, about 100 to 140 nm. The structure in whichthe film thickness of the gate insulating film 6 a is smaller than thefilm thickness of the gate insulating film 6 b is described here.

One example of the method for forming two types of gate insulating filmsas described above is shown below. In an example of such method, after asilicon oxide film is formed on the entire surface of the semiconductorsubstrate 1 by using a thermal oxidation method, the silicon oxide filmin the SOI region 1A is removed, and subsequently, a silicon oxide filmis formed in the SOI region 1A by using the thermal oxidation method. Bythis means, a silicon oxide film is formed in the SOI region 1A, and asilicon thermal oxide film having a film thickness larger than that isformed in the bulk silicon region 1B. Thereafter, a polysilicon film(conductor film for a gate electrode) and a silicon nitride film aresequentially formed (deposited) on the entire surface of thesemiconductor substrate 1 by using a CVD method or the like.

Subsequently, after the silicon nitride film, the polysilicon film, andthe silicon oxide film are patterned by using a photolithographytechnique and a dry etching method, a cleaning process is carried out soas to remove residues and the like.

Thus, the gate insulating film 6 a made of the silicon oxide film in theSOI region 1A is formed on the silicon layer 3 in the SOI region 1A, andthe gate electrode 7 a made of the polysilicon film is formed thereon.Moreover, the gate insulating film 6 b made of the silicon oxide film inthe bulk silicon region 1B is formed on the semiconductor substrate 1 inthe bulk silicon region 1B, and the gate electrode 7 b made of thepolysilicon film is formed thereon. On the upper surfaces of therespective gate electrodes 7 a and 7 b, silicon nitride films (hardmasks) 7 e having a film thickness of, for example, 20 to 40 nm areformed. In this manner, the gate insulating films 6 a and 6 b havingdifferent film thicknesses can be respectively formed in the SOT region1A and the bulk silicon region 1B. Note that the silicon nitride film 7e has a function of preventing the formation of an epitaxial layer onthe upper portion of the gate electrode 7 a in the following epitaxialgrowth process.

In this case, the gate insulating film 6 a and the gate insulating film6 b to be thin films are formed by using a thermal oxidation method, butthese may be formed by using a CVD method.

Here, the polysilicon films constituting the gate electrodes 7 a and 7 bare prepared as n-type semiconductor films (doped polysilicon films)having a low resistance by, for example, implanting an n-type impuritysuch as P (phosphorous) or As (arsenic) thereto. Moreover, thepolysilicon film may be formed by changing an amorphous silicon filminto a polycrystalline silicon film by the thermal treatment after thefilm formation (after the ion implantation).

Moreover, by the etching process for forming the gate electrodes 7 a and7 b and the gate insulating films 6 a and 6 b or by the cleaning processfor removing the etching residues or the like carried out thereafter,the upper surface of the silicon layer 3 and the upper surface of thesemiconductor substrate 1 are sometimes recessed in a downwarddirection, that is, in the direction toward a rear surface of thesemiconductor substrate 1. In this case, the exposed upper surfaces ofthe semiconductor substrate 1 located on the both sides thereof becomelower in comparison with the upper surface of the unexposedsemiconductor substrate 1 corresponding to the interface between thesemiconductor substrate 1 and the gate insulating film 6 b.

Next, as shown in FIG. 6, a silicon oxide film (insulating film) 5 and asilicon nitride film 12 are sequentially formed by, for example, a CVDmethod so as to cover the entire surface of the semiconductor substrate1 including the gate electrodes 7 a and 7 b. The film thickness of thesilicon oxide film 5 is set to, for example, 10 to 20 nm, and the filmthickness of the silicon nitride film 12 is set to, for example, 20 to40 nm. Thereafter, by partly removing the silicon nitride film 12 by,for example, an anisotropic etching method such as an RIE (Reactive IonEtching) method or the like, the upper surface of the silicon oxide film5 is exposed, so that the silicon nitride film 12 formed into a sidewallshape is left on each of the side walls of the gate electrodes 7 a and 7b in a self-aligned manner via the silicon oxide film 5. In this case,the surfaces of the silicon layer 3, the semiconductor substrate 1, theelement separation region 4, the gate electrodes 7 a and 7 b, and thesilicon nitride film 7 e are covered with the silicon oxide film 5. Thesilicon nitride film 12 is a dummy sidewall that is removed in asubsequent process and is not left at the time of completion of thesemiconductor device.

Next, as shown in FIG. 7, the bulk silicon region 1B is covered with aphotoresist film R1, and then, the silicon oxide film 5 not covered withthe silicon nitride film 12 is removed by using a selective dry etchingmethod. In this manner, the silicon oxide film 5 of the SOI region 1A isleft in a region between the gate electrode 7 a and the silicon nitridefilm 12 and in a region between the silicon layer 3 and the siliconnitride film 12, and the upper surface of the silicon layer 3 and theupper surface of the silicon nitride film 7 e in the SOI region 1A areexposed. Since this etching process is carried out with using thephotoresist film R1 as a mask, the silicon oxide film 5 covered with thephotoresist film R1 in the bulk silicon region 1B is not removed.

Next, as shown in FIG. 8, after the photoresist film R1 is removed bythe ashing process, epitaxial layers 14 are formed on the upper surfaceof the silicon layer 3 exposed on the semiconductor substrate 1 by usingan epitaxial growth method. The film thickness of the epitaxial layer 14is set to, for example, 20 to 60 nm. The epitaxial layers 14 are formedin contact with the upper surface of the silicon layer 3 so as tosandwich the gate electrode 7 a, the silicon oxide films 5 and thesilicon nitride films 12 on the side walls of the gate electrode 7 a. Atthis time, since the upper surface of the semiconductor substrate 1 ofthe bulk silicon region 1B is covered with the silicon oxide film 5 andis not exposed in the growth process of the epitaxial layers 14, noepitaxial layer is formed on the upper surface of the semiconductorsubstrate 1 in the bulk silicon region 1B.

The epitaxial layer 14 is a semiconductor layer having a film thicknesslarger than that of the gate insulating films 6 a and 6 b, and is madeof, for example, silicon (Si). The epitaxial layer 14 has a dome-likeshape whose film thickness is reduced as being closer to the endportion. In other words, the film thickness of the epitaxial layer 14 islarger in the center thereof as compared with the film thickness in theend portion.

Next, as shown in FIG. 9, the silicon oxide film 5 formed in the bulksilicon region 1B is partly removed by using a selective dry etchingmethod. In this manner, the silicon oxide film 5 in the bulk siliconregion 1B is left in a region between the gate electrode 7 b and thesilicon nitride film 12 and in a region between the semiconductorsubstrate 1 and the silicon nitride film 12, and the upper surface ofthe semiconductor substrate 1 and the upper surface of the siliconnitride film 7 e in the bulk silicon region 1B are exposed. Moreover, bythis etching process, the upper portion of the silicon oxide film 5 inthe SOI region 1A is also partly removed.

Next, as shown in FIG. 10, the silicon nitride films 7 e and 12 on thesemiconductor substrate 1 are removed by using a selective etchingmethod. Thus, the upper surfaces of the gate electrodes 7 a and 7 b areexposed, and the surface of the silicon oxide film 5 that was coveredwith the silicon nitride film 12 is exposed.

Thereafter, by the ion implantation of an n-type impurity such as P(phosphorous) or As (arsenic) into the upper surface of the siliconlayer 3 in the SOI region 1A, a pair of extension regions 8, which isn⁻-type semiconductor regions, is formed on the silicon layer 3 exceptfor a part right below the gate electrode 7 a. More specifically, in theSOI region 1A, the pair of extension regions 8 is formed on the siliconlayer 3 in the regions on the both sides of the gate electrode 7 a.

Similarly, by implanting an n-type impurity such as P (phosphorous) orAs (arsenic) into the upper surface of the semiconductor substrate 1 inthe bulk silicon region 1B, a pair of extension regions 9, which isn⁻-type semiconductor regions, is formed on the upper surface of thesemiconductor substrate 1 located on the sides of the gate electrode 7 bin the gate length direction. More specifically, in the bulk siliconregion 1B, the pair of extension regions 9 is formed on the uppersurface of the semiconductor substrate 1 in the regions on the bothsides of the gate electrode 7 b.

Note that, with respect to the manufacturing processes of theabove-mentioned extension regions 8 and 9, either one of these may becarried out first. Moreover, the respective extension regions 8 and 9may be formed by the same ion implanting process, or may be formed indifferent processes respectively carried out for the SOI region 1A andthe bulk silicon region 1B. In the case of forming the extension regions8 and 9 in respectively different processes, when forming one of theextension regions, for example, a photoresist film is used as a mask soas to prevent impurity ions from being introduced to a region in whichthe other extension region is to be formed.

Also, in the present embodiment, as shown in FIG. 10, the extensionregions 8 and 9 are formed after the silicon nitride films 7 e and 12have been removed, but the extension regions 8 and 9 may be formed byusing an ion implantation method or the like in the process describedwith reference to FIG. 6 at the time before the formation of the siliconnitride film 12 and after the formation of the silicon oxide film 5.

Next, as shown in FIG. 11, for example, by using a CVD method, a siliconnitride film 13 having a film thickness of about 40 to 60 nm is formedso as to cover the respective exposed surfaces of the gate electrodes 7a and 7 b, the silicon oxide film 5, the epitaxial layers 14, and thesemiconductor substrate 1. Thereafter, an anisotropic etching process iscarried out by an RIE method or the like so as to partly remove thesilicon nitride film 13, thereby exposing the respective upper surfacesof the gate electrodes 7 a and 7 b, the epitaxial layers 14, and thesemiconductor substrate 1. In this manner, the silicon nitride film 13is formed on each of the side walls of the gate electrodes 7 a and 7 bin a self-aligned manner via the silicon oxide film 5. A sidewall madeup of the silicon oxide film 5 and the silicon nitride film 13 is formedon each of the side walls of the gate electrodes 7 a and 7 b.

Note that the silicon nitride film 13 is formed so as to cover thesilicon oxide film 5. More specifically, at the time when the siliconnitride film 13 is formed by a CVD method or the like in theabove-mentioned process, the uppermost surface of the silicon oxide film5 is positioned at a region lower than the upper surface of the adjacentgate electrode 7 a or 7 b. Therefore, when the sidewall made up of thesilicon nitride film 13 is formed in a self-aligned manner by a dryetching process, the silicon nitride film 13 is in contact with each ofthe side walls of the gate electrode 7 a or 7 b at a region above theuppermost surface of the silicon oxide film 5, and also, the siliconnitride film 13 is formed so as to cover the end portion of the siliconoxide film 5 corresponding to the side surface of the end portionlocated at the farthest position from the adjacent gate electrode 7 a or7 b. In this manner, the silicon nitride film 13 is formed so as tocover the end portions of the silicon oxide film 5 corresponding to bothof the end portion of the uppermost portion and the end portion at thefarthest position from the gate electrode.

At this time, the lower surface of the silicon nitride film 13 in thebulk silicon region 1B is in contact with the upper surfaces of thesilicon oxide film 5 and the semiconductor substrate 1, while the lowersurface of the silicon nitride film 13 in the SOI region 1A is incontact with the upper surfaces of the silicon oxide film 5 and theepitaxial layer 14. Note that the lower surface of the silicon nitridefilm 13 in the SOI region 1A is sometimes in contact with the uppersurface of the silicon layer 3.

In other words, in the SOI region 1A, the upper surface of the endportion of the epitaxial layer 14 on the side of the gate electrode 7 acorresponding to the end portion closer to the gate electrode 7 a iscovered with the silicon nitride film 13. The film thickness of the endportion of the epitaxial layer 14 is smaller than that of the center ofthe epitaxial layer 14. Therefore, by the process described withreference to FIG. 11, the state in which one portion of the region ofthe epitaxial layer 14 having a smaller film thickness is covered withthe silicon nitride film 13 is achieved.

Next, as shown in FIG. 12, in the SOI region 1A, an ion implantationprocess of an n-type impurity (for example, As (arsenic)) is carried outat a comparatively high concentration from above the silicon layer 3,with using the gate electrode 7 a and the silicon nitride film 13 asmasks. In the SOI region 1A, by implanting an n-type impurity (forexample, As (arsenic)) into the epitaxial layer 14 not covered with thegate electrode 7 a, the silicon oxide film 5, and the silicon nitridefilm 13, a diffusion layer 10 is formed. In this manner, in the SOIregion 1A, the n channel type MOSFET Qa having a channel region made upof the silicon layer 3, the gate electrode 7 a, the extension regions 8,and the diffusion layers 10 is formed. The diffusion layers 10 and theextension regions 8 are semiconductor regions constituting the sourceand drain regions of the MOSFET Qa in the SOI region 1A.

Moreover, in the bulk silicon region 1B, an ion implantation process ofan n-type impurity (for example, As (arsenic)) is carried out at acomparatively high concentration from above the semiconductor substrate1, with using the gate electrode 7 b and the silicon nitride film 13 asmasks. In the bulk silicon region 1B, by implanting the n-type impurity(for example, As (arsenic)) into the upper surface of the semiconductorsubstrate 1 not covered with the gate electrode 7 b, the silicon film 5,and the silicon nitride film 13, the diffusion layer 11 is formed. Inthis manner, in the bulk silicon region 1B, the n channel type MOSFET Qbhaving a channel region made up of the main surface of the semiconductorsubstrate 1, the gate electrode 7 b, the extension regions 9, and thediffusion layers 11 is formed. The diffusion layers 11 and the extensionregions 9 are semiconductor regions constituting the source and drainregions of the MOSFET Qb of the bulk silicon region 1B.

Note that, since the semiconductor layer in a region to which impurityions are implanted is damaged to be amorphized in the ion implantationfor forming the diffusion layers 10 and 11, an annealing (thermaltreatment) process at about 1000° C. is carried out for the purpose ofrecrystallization of the semiconductor layer after the ion implantation.

The source and drain regions of the respective MOSFET Qa and Qb areprovided with an LDD (Lightly Doped Drain) structure including thediffusion layers 10 and 11 in which an impurity has been implanted at ahigh concentration and the extension regions 8 and 9 containing animpurity at a low concentration. Therefore, the impurity concentrationof the diffusion layers 10 and 11 is higher than the impurityconcentration of the extension regions 8 and 9.

In the process of implanting impurity ions at a high concentration tothe semiconductor layer like the process for forming the diffusionlayers 10 and 11, the crystallinity of a semiconductor layer to whichthe impurity ions have been implanted is deteriorated and is amorphized(non-crystallized). It is conceivable that the crystallinity of theamorphized semiconductor layer is recovered by a thermal treatment inthe subsequent process so as to be formed into a layer withcrystallinity, but in order to recover the crystallinity of theamorphized semiconductor layer, a semiconductor layer serving as a corefor the crystallization needs to be located close to the amorphizedsemiconductor layer. In other words, in the case when no semiconductorlayer having crystallinity is located close to the amorphizedsemiconductor layer, it is difficult to crystallize the amorphizedsemiconductor layer even when a thermal treatment is carried out.

When the diffusion layer 10 is to be formed in a thin semiconductorlayer like the silicon layer 3, the silicon layer 3 is amorphized fromthe lower surface up to the upper surface due to the small filmthickness of the silicon layer 3, with the result that no semiconductorlayer having crystallinity remains in the vicinity thereof.Consequently, it becomes difficult to recover from the damage caused bythe ion implantation. For this reason, in the SOI region 1A, theepitaxial layers 14 are formed to increase the film thickness of thesemiconductor layer to which ions are implanted at the time of formingthe diffusion layers 10, thereby preventing the amorphization of thesemiconductor layer over the entire thickness due to the ionimplantation.

However, in the case when the ion implantation is carried out from abovethe semiconductor substrate 1, since the film thickness of the endportion of the epitaxial layer 14 is small, the impurity ions areimplanted at a high concentration into the bottom portion of the siliconlayer 3 right below the end portion of the exposed epitaxial layer 14,with the result that the layer might be damaged and amorphized by theion implantation. In particular, if damages which cannot be recovered bya thermal treatment remain in the silicon layer 3 right below the endportion of the epitaxial layer 14, that is, the end portion closer tothe gate electrode 7 a, electrical characteristics of the MOSFET Qa aredeteriorated.

In contrast, in the present embodiment, since the end portion of theepitaxial layer 14 closer to the gate electrode 7 a is covered with thesilicon nitride film (insulating film) 13 constituting the sidewalls inthe ion implantation process shown in FIG. 12, it is possible to preventthe silicon layer 3 right below the corresponding end portion from beingamorphized and become unrecoverable in crystallinity. Thus, since it ispossible to prevent degradation of the electrical characteristics of theMOSFET Qa, performances of the semiconductor device can be improved.

More specifically, in the MOSFET Qa in the SOI region 1A, the uppersurface of the source and drain regions is positioned at a region higherthan the interface between the gate insulating film 6 a and the siliconlayer 3. Moreover, in the MOSFET Qb in the bulk silicon region 1B, theupper surface of the source and drain regions is as high as or lowerthan the interface between the gate insulating film 6 b and thesemiconductor substrate 1.

Also, as shown in the present embodiment, in the case when the lowwithstand voltage MOSFET Qa is formed in the SOI region 1A and the highwithstand voltage MOSFET Qb is formed in the bulk silicon region 1B, itis conceivable that the gate insulating film 6 b having a film thicknesslarger than that of the gate insulating film 6 a formed in the SOIregion 1A is formed in the bulk silicon region 1B. In this case, whenthe thick insulating film made of, for example, a silicon oxide film isetched to form the gate insulating film 6 b in the process describedwith reference to FIG. 5, etching residues from the insulating film tendto remain on the upper surface of the semiconductor substrate 1 in thebulk silicon region 1B due to the large film thickness. When theepitaxial layer is formed on the upper surface of the semiconductorsubstrate 1 in the state where the residues remain thereon, theepitaxial layer might fail to uniformly grow due to the presence of theresidues, with the result that electrical characteristics of the MOSFETQb shown in FIG. 12 are degraded or varied.

In contrast, in the present embodiment, in the process shown in FIG. 8,the epitaxial layers 14 in the SOI region 1A are formed in the statewhere the upper surface of the semiconductor substrate 1 in the bulksilicon region 1B is covered with silicon oxide film 5, therebypreventing the epitaxial layer from being formed in the bulk siliconregion 1B. Therefore, since it is possible to prevent theabove-mentioned degradation of electrical characteristics of the MOSFETQb and the occurrence of variations of electrical characteristics of theMOSFET Qb, performances of the semiconductor device can be improved.

Moreover, since the epitaxial layer is not formed in the bulk siliconregion 1B as described earlier, it is possible to prevent the electricalcharacteristics of the MOSFET Qb in the bulk silicon region 1B frombeing changed. Therefore, in the same manner as in the semiconductordevice having no SOI structure, the design matters to be used forforming and using a MOSFET including no epitaxial layer having a shapethat is raised from the main surface of the substrate in the part ofsource and drain can be applied to the formation and use of the MOSFETQb in the bulk silicon region 1B. Consequently, it is possible to reducemanufacturing costs of the semiconductor device.

Although detailed descriptions and illustrations of the subsequentprocesses are omitted, after a silicide layer 15 is formed on the gateelectrodes 7 a and 7 b and on the diffusion layers 10 and 11 by using aconventionally known salicide technique, the MOSFETs Qa and Qb arecovered with a stacked film made up of the insulating film 16 and theinterlayer insulating film 17. Thereafter, contact plugs 18 penetratingthe interlayer insulating film 17 and the insulating film 16 areconnected to the silicide layer 15. Subsequently, an insulating film 19and an interlayer insulating film 20 are sequentially formed on theinterlayer insulating film 17, and wirings 21 connected to the inside ofeach of the wiring trenches penetrating the insulating film 19 and theinterlayer insulating film 20 and the upper surface of the contact plugs18 are formed, so that the semiconductor device of the presentembodiment shown in FIG. 13 is completed.

Second Embodiment

In the present embodiment, a semiconductor device including a MOSFETformed by a manufacturing method different from that of the firstembodiment will be described.

First, the manufacturing processes of a MOSFET according to the presentembodiment will be described with reference to drawings. FIGS. 14 to 21are cross-sectional views showing manufacturing processes of asemiconductor device according to the present embodiment, that is, thesemiconductor device provided with an n channel type MOSFET in each ofthe SOI region and the bulk silicon region.

First, by carrying out the processes described with reference to FIGS. 2to 5, a gate electrode is formed on a semiconductor substrate in each ofthe SOI region and the bulk silicon region via a gate insulating film.

Next, as shown in FIG. 14, by using, for example, a CVD method, asilicon oxide film 5 and a silicon nitride film (insulating film) 12 aare formed (deposited) on the entire surface of the semiconductorsubstrate 1.

Next, as shown in FIG. 15, after the silicon nitride film 12 a in thebulk silicon region 1B is covered with a photoresist film R2, thesilicon nitride film 12 a and the silicon oxide film 5 in the SOI region1A are processed by using an anisotropic etching method such as an RIEmethod, thereby exposing the upper surface of the silicon layer 3 andthe upper surface of the silicon nitride film 7 e. In this manner, thesilicon nitride film 12 a is formed into a sidewall shape via thesilicon oxide film 5 on each of the side walls of the gate electrode 7 ain the SOI region 1A. Moreover, the silicon oxide film 5 in the SOIregion 1A remains at a region between the gate electrode 7 a and thesilicon nitride film 12 a and at a region between the silicon layer 3and the silicon nitride film 12 a.

Next, as shown in FIG. 16, after the photoresist film R2 is removed byan ashing process, epitaxial layers 14 are formed on the upper surfaceof the silicon layer 3 exposed on the semiconductor substrate 1 by usingan epitaxial growth method. The film thickness of the epitaxial layer 14is set to, for example, 20 to 60 nm. At this time, since the uppersurface of the semiconductor substrate 1 in the bulk silicon region 1Bis covered with the silicon oxide film 5 and the silicon nitride film 12a and is not exposed in the growth process of the epitaxial layers 14,no epitaxial layer is formed on the upper surface of the semiconductorsubstrate 1 in the bulk silicon region 1B.

Next, as shown in FIG. 17, a photoresist film R3, which covers thesilicon layer 3, the gate electrode 7 a, the silicon oxide film 5, thesilicon nitride film 12 a, the epitaxial layers 14, and the siliconnitride film 7 e in the SOI region 1A and does not cover the bulksilicon region 1B, is formed.

Thereafter, by carrying out an anisotropic etching process using the RIEmethod or the like, the silicon nitride film 12 a and the silicon oxidefilm 5 in the bulk silicon region 1B are partly removed, therebyexposing the upper surfaces of the silicon nitride film 7 e and thesemiconductor substrate 1. In this manner, the silicon nitride film 12 ais formed in a self-aligned manner on each side wall of the gateelectrode 7 b via the silicon oxide film 5. At this time, the epitaxiallayers 14 are formed on the both sides of the gate electrode 7 a in theSOI region 1A, while no epitaxial layer is formed on the both sides ofthe gate electrode 7 b in the bulk silicon region 1B.

Next, as shown in FIG. 18, after the photoresist film R3 is removed byan ashing process, the silicon nitride films 7 e and 12 a on thesemiconductor substrate 1 are removed by a selective etching methodusing hot phosphoric acid or the like. Thus, the upper surfaces of thegate electrodes 7 a and 7 b are exposed, and the surface of the siliconoxide film 5 that was covered with the silicon nitride film 12 isexposed.

Thereafter, by the ion implantation of an n-type impurity such as P(phosphorous) or As (arsenic) into the upper surface of the siliconlayer 3 in the SOI region 1A, a pair of extension regions 8, which isn⁻-type semiconductor regions, is formed on the silicon layer 3 exceptfor a part right below the gate electrode 7 a. More specifically, in theSOI region 1A, the pair of extension regions 8 is formed on the siliconlayer 3 in the regions on the both sides of the gate electrode 7 a.

Similarly, by implanting an n-type impurity such as P (phosphorous) orAs (arsenic) into the upper surface of the semiconductor substrate 1 inthe bulk silicon region 1B, a pair of extension regions 9, which isn⁻-type semiconductor regions, is formed on the upper surface of thesemiconductor substrate 1 located on the sides of the gate electrode 7 bin the gate length direction. More specifically, in the bulk siliconregion 1B, the pair of extension regions 9 is formed on the uppersurface of the semiconductor substrate 1 in the regions on the bothsides of the gate electrode 7 b.

Note that, with respect to the manufacturing processes of theabove-mentioned extension regions 8 and 9, either one of these may becarried out first. Moreover, the respective extension regions 8 and 9may be formed by the same ion implanting process, or may be formed indifferent processes respectively carried out for the SOI region 1A andthe bulk silicon region 1B. In the case of forming the extension regions8 and 9 in respectively different processes, when forming one of theextension regions, for example, a photoresist film is used as a mask soas to prevent impurity ions from being introduced to a region in whichthe other extension region is to be formed.

Also, in the present embodiment, the extension regions 8 and 9 areformed after the silicon nitride films 7 e and 12 have been removed, butthe extension regions 8 and 9 may be formed by using an ion implantationmethod or the like in the process described with reference to FIG. 14 atthe time before the formation of the silicon nitride film 12 a and afterthe formation of the silicon oxide film 5.

Next, by carrying out the same processes as the processes described withreference to FIG. 11, the structure shown in FIG. 19 is obtained. Morespecifically, as shown in FIG. 19, for example, by using a CVD method, asilicon nitride film 13 having a film thickness of about 40 to 60 nm isformed so as to cover the respective exposed surfaces of the gateelectrodes 7 a and 7 b, the silicon oxide film 5, the epitaxial layers14, and the semiconductor substrate 1. Thereafter, an anisotropicetching process is carried out by an RIE method or the like so as topartly remove the silicon nitride film 13, thereby exposing therespective upper surfaces of the gate electrodes 7 a and 7 b, theepitaxial layers 14, and the semiconductor substrate 1. In this manner,the silicon nitride film 13 is formed on each of the side walls of thegate electrodes 7 a and 7 b in a self-aligned manner via the siliconoxide film 5. At this time, the upper surface of the end portion of theepitaxial layer 14 closer to the gate electrode 7 a is covered with thesilicon nitride film 13.

Next, by carrying out the same processes as those described withreference to FIG. 12, the structure shown in FIG. 20 is obtained. Morespecifically, by carrying out an ion implantation process of an n-typeimpurity (for example, As (arsenic)) at a comparatively highconcentration to the SOI region 1A and the bulk silicon region 1B,diffusion layers 10 are formed in the epitaxial layers 14 in the SOIregion 1A, and diffusion layers 11 are formed on the upper surface ofthe semiconductor substrate 1 in the bulk silicon region 1B. In thismanner, in the SOI region 1A, the n channel type MOSFET Qa having achannel region made up of the silicon layer 3, the gate electrode 7 a,the extension regions 8, and the diffusion layers 10 is formed, and inthe bulk silicon region 1B, the n channel type MOSFET Qb having achannel region made up of the main surface of the semiconductorsubstrate 1, the gate electrode 7 b, the extension regions 9, and thediffusion layers 11 is formed.

With respect to the subsequent processes, the same processes as thosedescribed with reference to FIG. 13 are carried out, so that thesemiconductor device shown in FIG. 21 is completed.

In the semiconductor device of the present embodiment, in the samemanner as in the semiconductor device of the aforementioned firstembodiment, the epitaxial layers 14 are formed in the SOI region 1A, andan ion implantation to form the diffusion layers 10 is carried out inthe state where the end portions the epitaxial layers 14 are covered.Therefore, it is possible to prevent damages caused by the ionimplantation from remaining in the semiconductor layer including thesource and drain regions of the MOSFET Qa. In other words, it ispossible to prevent a region whose crystallinity is unrecoverable fromoccurring in the amorphized semiconductor layer. Consequently, since itis possible to prevent the degradation of electrical characteristics ofthe MOSFET Qa, the performances of the semiconductor device can beimproved.

Moreover, in the present embodiment, in the process shown in FIG. 16,the epitaxial layers 14 in the SOT region 1A are formed in the statewhere the upper surface of the semiconductor substrate 1 in the bulksilicon region 1B is covered with the silicon oxide film 5 and thesilicon nitride film 12 a, thereby preventing the epitaxial layer frombeing formed in the bulk silicon region 1B. Consequently, since theepitaxial layer is not formed in the source and drain regions of theMOSFET Qb, it is possible to prevent the degradation of electricalcharacteristics of the MOSFET Qb and the occurrence of variations inelectrical characteristics of the MOSFET Qb, with the result that theperformances of the semiconductor device can be improved.

Third Embodiment

The present third embodiment will show a structure in which a MOSFET Qcand a MOSFET Qd each having a thin-film gate oxide film are formed alsoin the bulk silicon region 1B as shown in FIG. 22. In this case, noepitaxial layer 14 is formed in the source and drain regions of theMOSFET Qc, and the epitaxial layers 14 are formed in the source anddrain regions of the MOSFET Qd. The MOSFET Qc is provided with a gateinsulating film 6 c and a gate electrode 7 c sequentially formed on thesemiconductor substrate 1 in the bulk silicon region 1B. The MOSFET Qdis provided with a gate insulating film 6 d and a gate electrode 7 dsequentially formed on the semiconductor substrate 1 in the bulk siliconregion 1B. The gate insulating films 6 c and 6 d are thin-film gateoxide films having a film thickness smaller than that of the gateinsulating film 6 b. In this case, the thin-film gate oxide film has afilm thickness of 2 to 3 nm similar to the gate insulating film 6 a ofthe MOSFET Qa. The effects obtained by the present embodiment will bedescribed below.

In the case when a circuit that is designed for use in a semiconductordevice made up of only existing bulk MOSFETs is to be directly divertedto a semiconductor device using an SOI substrate like in the case of thepresent application, it is desirable that the characteristics of thebulk MOSFETs are not altered. For this reason, to portions where nochanges in the characteristics of the bulk MOSFET are desired, theMOSFET Qc having no epitaxial layers 14 formed therein is utilized.

On the other hand, in the case when the epitaxial layer 14 is formed, ashort channel effect can be suppressed without the necessity of changingthe gate length of the MOSFET. For this reason, to portions where thesuppression of the short channel effect is desired, the MOSFET Qd isused. By suppressing the short channel effect, it is possible tosuppress the off-current.

As described above, the MOSFET Qc in which no epitaxial layer 14 isformed and the MOSFET Qd in which the epitaxial layers 14 are formed areselectively used depending on characteristics required for each ofMOSFETs.

At this time, with respect to the manufacturing method of thesemiconductor device, the method according to the aforementioned firstembodiment or the method according to the aforementioned secondembodiment may be used. With respect to the mask as well, those masksused in FIG. 7 or FIG. 15 may be utilized.

Furthermore, if necessary, all the low withstand voltage MOSFETs in thebulk silicon region 1B may be MOSFETs Qc, or all of them may be MOSFETsQd. Note that, in the case when all the low withstand voltage MOSFETs inthe bulk silicon region 1B are the MOSFETs Qc, since no epitaxial layer14 is formed in the bulk silicon region 1B, it is possible to furtherimprove the reliability of the semiconductor device like in theaforementioned first and second embodiments.

In the aforementioned first and second embodiments, the fact that, inthe case when the epitaxial layers 14 are formed in a MOSFET in the bulksilicon region 1B, electrical characteristics tend to fluctuate incomparison with a MOSFET in which no epitaxial layer 14 is formed hasbeen described. However, if it is possible to remove the residues leftat the time of the etching of the gate insulating film 6 b or if thebase epitaxial layers 14 can be uniformly grown at the time of formingthe silicide layer 3, the structure of the present embodiment may beadopted.

In the foregoing, the invention made by the inventors of the presentinvention has been concretely described based on the embodiments.However, it is needless to say that the present invention is not limitedto the foregoing embodiments and various modifications and alterationscan be made within the scope of the present invention.

For example, in the above-mentioned first to third embodiments, the casein which n channel type MOSFETs are formed on a semiconductor substratehas been described. However, the semiconductor element may be a pchannel type MOSFET or may be a MIS-type FET.

What is claimed is:
 1. A method of manufacturing a semiconductor deviceincluding a first field effect transistor formed in a first region of asemiconductor substrate, comprising the steps of: (a) preparing thesemiconductor substrate including a first insulating film formed on thesemiconductor substrate in the first region, and a semiconductor layerformed on the first insulating film; (b) forming a first gate electrodeof the first field effect transistor on the semiconductor layer via afirst gate insulating film; (c) forming a second insulating film on eachof the semiconductor layer and a side surface of the first gateelectrode; (d) forming a third insulating film on the side surface ofthe first gate electrode via the second insulating film; (e) forming anepitaxial layer on the semiconductor layer exposed from each of thefirst gate electrode, the second insulating film and the thirdinsulating film such that the epitaxial layer has an end portion whosethickness is thinner than a thickness of a central portion thereof; (f)after the step of (e), removing the third insulating film; (g) after thestep of (f), forming a first extension region, which is to be served asa part of one of a first source region of the first field effecttransistor and a first drain region of the first filed effecttransistor, in each of the semiconductor layer and the epitaxial layer;(h) after the step of (g), forming a fourth insulating film on the sidesurface of the first gate electrode via the second insulating film suchthat the fourth insulating film covers an upper surface of the epitaxiallayer in the end portion; and (i) after the step (h), forming a firstdiffusion layer, which is to be served as a part of one of the firstsource region of the first field effect transistor and the first drainregion of the first filed effect transistor, in at least a portion ofthe epitaxial layer, which is exposed from the fourth insulating film,an impurity concentration of the first diffusion layer being higher thanan impurity concentration of the first extension region.
 2. The methodaccording to claim 1, wherein, in the step of (g), the first extensionregion is formed by ion implanting a first impurity into each of thesemiconductor layer and the epitaxial layer from the upper surface sideof the epitaxial layer, wherein, in the step of (i), the first diffusionlayer is formed by ion implanting the first impurity into at least theportion of the epitaxial layer from the upper surface side of theepitaxial layer, and wherein a concentration of the first impurity forforming the first diffusion layer is higher than a concentration of thefirst impurity for forming the first extension region.
 3. The methodaccording to claim 2, wherein the first extension region is formed byion implanting the first impurity into the semiconductor layer throughthe second insulating film.
 4. The method according to claim 1, furthercomprising the step of: (j) forming a silicide layer on the firstdiffusion layer.
 5. The method according to claim 4, wherein thesilicide layer is comprised of a cobalt silicide.
 6. The methodaccording to claim 1, wherein the side surface of the first gateelectrode is covered with the second insulating film until the step of(e) is performed, wherein the side surface of the first gate electrodeis exposed from the second insulating film after the step of (f) isperformed, and wherein, in the step of (h), the fourth insulating filmis formed such that the fourth insulating film is in contact with theside surface of the first gate electrode, which is exposed from thesecond insulating film.
 7. The method according to claim 1, wherein thesecond insulating film is comprised of a silicon oxide, and wherein thefourth insulating film is comprised of a silicon nitride.
 8. The methodaccording to claim 1, wherein a thickness of the first insulating filmis 10 to 20 nm, and wherein a thickness of the semiconductor layer is 10to 20 nm.
 9. A method of manufacturing a semiconductor device includinga first field effect transistor formed in a first region of asemiconductor substrate, and a second field effect transistor formed ina second region of the semiconductor substrate, which is different fromthe first region, comprising the steps of: (a) preparing thesemiconductor substrate including a first insulating film formed on thesemiconductor substrate in the first region, and a semiconductor layerformed on the first insulating film, the semiconductor substrate in thesecond region being exposed from the first insulating film and thesemiconductor layer; (b) forming a first gate electrode of the firstfield effect transistor on the semiconductor layer via a first gateinsulating film, and forming a second gate electrode of the second fieldeffect transistor on the semiconductor substrate in the second regionvia a second gate insulating film; (c) forming a second insulating filmon each of the semiconductor layer, a side surface of the first gateelectrode, the semiconductor substrate in the second region, and a sidesurface of the second gate electrode; (d) forming a third insulatingfilm on each of the side surface of the first gate electrode via thesecond insulating film in the first region and the side surface of thesecond gate electrode via the second insulating film in the secondregion; (e) forming an epitaxial layer on the semiconductor layerexposed from each of the first gate electrode, the second insulatingfilm and the third insulating film such that the epitaxial layer has anend portion whose thickness is thinner than a thickness of a centralportion thereof, while the semiconductor substrate in the second regionis covered with the second insulating film; (f) after the step of (e),removing the third insulating film in each of the first region and thesecond; (g) after the step of (f), forming a first extension region,which is to be served as a part of one of a first source region of thefirst field effect transistor and a first drain region of the firstfiled effect transistor, in each of the semiconductor layer and theepitaxial layer, and forming a second extension region, which is to beserved as a part of one of a second source region of the second fieldeffect transistor and a second drain region of the second filed effecttransistor, in the semiconductor substrate in the second region; (h)after the step of (g), forming a fourth insulating film on each of theside surface of the first gate electrode via the second insulating filmin the first region and the side surface of the second gate electrodevia the second insulating film in the second region such that the fourthinsulating film to be formed in the first region covers an upper surfaceof the epitaxial layer in the end portion, and such that the fourthinsulating film to be formed in the second region covers a portion ofthe second extension region; and (i) after the step (h), forming a firstdiffusion layer, which is to be served as a part of one of the firstsource region of the first field effect transistor and the first drainregion of the first filed effect transistor, in at least a portion ofthe epitaxial layer, which is exposed from the fourth insulating film,and forming a second diffusion layer, which is to be served as a part ofone of the second source region of the second field effect transistorand the second drain region of the second filed effect transistor, in atleast a portion of the semiconductor substrate in the second region,which is exposed from the fourth insulating film, an impurityconcentration of the first diffusion layer being higher than an impurityconcentration of the first extension region, and an impurityconcentration of the second diffusion layer being higher than animpurity concentration of the second extension region.
 10. The methodaccording to claim 9, wherein, in cross-section view, the interfacebetween the semiconductor layer and the first gate insulating film ispositioned higher than the interface between the semiconductor substrateand the second gate insulating film.
 11. The method according to claim9, wherein a thickness of the first gate insulating film is 2 to 3 nm,and wherein a thickness of the second gate insulating film is 3 to 8 nm.12. The method according to claim 9, wherein a thickness of the secondgate insulating film is greater than a thickness of the first gateinsulating film.
 13. The method according to claim 9, wherein, in thestep of (g), the first extension region and the second extension regionare formed by ion implanting a first impurity into each of thesemiconductor layer and the epitaxial layer and into the semiconductorsubstrate in the second region, respectively, from the upper surfaceside of the epitaxial layer, wherein, in the step of (i), the firstdiffusion layer and the second diffusion layer are formed by ionimplanting the first impurity into at least the portion of the epitaxiallayer and into at least the portion of the semiconductor substrate inthe second region, respectively, from the upper surface side of theepitaxial layer, wherein a concentration of the first impurity forforming the first diffusion layer is higher than a concentration of thefirst impurity for forming the first extension region, and wherein aconcentration of the first impurity for forming the second diffusionlayer is higher than a concentration of the first impurity for formingthe second extension region.
 14. The method according to claim 13,wherein the first extension region is formed by ion implanting the firstimpurity into the semiconductor layer through the second insulating filmin the first region, and wherein the second extension region is formedby ion implanting the first impurity into the semiconductor substratethrough the second insulating film in the second region.
 15. The methodaccording to claim 9, further comprising the step of: (j) forming asilicide layer on each of the first diffusion layer and the seconddiffusion layer.
 16. The method according to claim 15, wherein thesilicide layer is comprised of a cobalt silicide.
 17. The methodaccording to claim 9, wherein the side surface of the first gateelectrode is covered with the second insulating film until the step of(e) is performed, wherein the side surface of the first gate electrodeis exposed from the second insulating film after the step of (f) isperformed, and wherein, in the step of (h), the fourth insulating filmis formed such that the fourth insulating film is in contact with theside surface of the first gate electrode, which is exposed from thesecond insulating film.
 18. The method according to claim 9, wherein thesecond insulating film is comprised of a silicon oxide, and wherein thefourth insulating film is comprised of a silicon nitride.
 19. The methodaccording to claim 9, wherein a thickness of the first insulating filmis 10 to 20 nm, and wherein a thickness of the semiconductor layer is 10to 20 nm.